High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields
نویسندگان
چکیده
SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. High temperature annealing with two plateaus at 1400°C 1700°C is performed to recrystallize the layers. The crystallinity was investigated by Raman spectroscopy laser lines of 785, 405 325nm. To determine electrical conductivity layers, measurements are made. Only electron beam presents a recrystallization close homoepitaxial quality but, contrary they don’t an conductivity.
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ژورنال
عنوان ژورنال: Solid State Phenomena
سال: 2023
ISSN: ['1662-9787', '2813-0936', '1662-9779', '1012-0394']
DOI: https://doi.org/10.4028/p-w0ryrj